hexfet ? power mosfet d s g benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant, halogen-free v dss 100v r ds(on) typ. 7.2m ?? max 8.6m ?? i d (silicon limited) 97a ? to-220ab irf100b202 s d g g d s gate drain source base part number package type standard pack form quantity irf100b202 to-220 tube 50 irf100b202 orderable part number 1 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 strong ir fet? irf100b202 application ? ? brushed motor drive applications ? ? bldc motor drive applications ? ? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) fig 2. maximum drain current vs. case temperature fig 1. typical on? resistance vs. gate voltage 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 58a t j = 25c t j = 125c
2 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c reference to 25c, i d = 5ma ? r ds(on) static drain-to-source on-resistance ??? 7.2 8.6 m ??? v gs = 10v, i d = 58a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 20 a v ds =100 v, v gs = 0v ??? ??? 250 v ds = 80v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.4 ??? ?? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.113mh, r g = 50 ? , i as = 58a, v gs =10v. ?? i sd ? 58a, di/dt ? 1316a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 24a, v gs =10v. ? this value determined from sample failure population, starting t j =25c, l= 0.113mh, r g = 50 ? , i as =58a, v gs =10v. avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 189 e as (thermally limited) single pulse avalanche energy ?? 292 i ar avalanche current ? see fig 15, 16, 23a, 23b ? a e ar repetitive avalanche energy ? mj mj e as (tested) single pulse avalanche energy tested value ?? 217 thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.68 r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 c/w ? absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 97 a ? i d @ t c = 100c continuous drain current, v gs @ 10v 68 i dm pulsed drain current ?? 380 p d @t c = 25c maximum power dissipation 221 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ?
3 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 123 ??? ??? s v ds = 10v, i d =58a q g total gate charge ??? 77 116 nc ? i d = 58a q gs gate-to-source charge ??? 20 ??? v ds = 50v q gd gate-to-drain charge ??? 23 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 54 ??? t d(on) turn-on delay time ??? 11 ??? ns v dd = 65v t r rise time ??? 56 ??? i d = 58a t d(off) turn-off delay time ??? 55 ??? r g = 2.7 ?? t f fall time ??? 58 ??? v gs = 10v ? c iss input capacitance ??? 4476 ??? pf ? v gs = 0v c oss output capacitance ??? 319 ??? v ds = 50v c rss reverse transfer capacitance ??? 154 ??? ? = 1.0mhz, see fig.5 c oss eff.(er) effective output capacitance (energy related) ??? 355 ??? v gs = 0v, vds = 0v to 80v ? c oss eff.(tr) output capacitance (time related) ??? 385 ??? v gs = 0v, vds = 0v to 80v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 97 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 380 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 58a,v gs = 0v ?? t rr reverse recovery time ??? 51 ??? ns t j = 25c v dd = 85v ??? 58 ??? t j = 125c i f = 58a, q rr reverse recovery charge ??? 105 ??? nc t j = 25c di/dt = 100a/s ??? ??? 133 ??? t j = 125c ? i rrm reverse recovery current ??? 3.7 ??? a t j = 25c ? dv/dt peak diode recovery dv/dt ?? ??? 28 ??? v/ns t j = 175c,i s =58a,v ds = 100v d s g
4 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 175c 4.0v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 58a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 58a fig 8. typical gate charge vs. gate-to-source voltage
5 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy fig 13. typical on? resistance vs. drain current 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 20 40 60 80 100 120 v ds, drain-to-source voltage (v) 0.0 0.4 0.8 1.2 1.6 2.0 e n e r g y ( j ) fig 11. drain-to-source breakdown voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 90 100 110 120 130 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5.0ma 0 20 40 60 80 100 120 i d , drain current (a) 5 10 15 20 25 30 35 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.0v vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
6 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 0.01 0.05 0.10 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 58a fig 15. avalanche current vs. pulse width
7 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a id = 250a i d = 1.0ma i d = 1.0a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 25 30 i r r m ( a ) i f = 39a v r = 85v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 400 800 1200 1600 q r r ( n c ) i f = 39a v r = 85v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 25 i r r m ( a ) i f = 58a v r = 85v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 400 800 1200 1600 q r r ( n c ) i f = 58a v r = 85v t j = 25c t j = 125c
8 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
9 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application .
10 www.irf.com ? 2014 international rectifier submit datasheet feedback august 18, 2014 ? irf100b202 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/
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